Transient photoconductivity and fluorescence methods are used to measure the minority carrier lifetime of silicon wafers, semi-finished solar cells or finished cells.
The WCT-120PL product uses the standard QSSPC method and the photoluminescence method to measure the carrier lifetime of silicon wafers. The transient photoconductivity decay method (PCD) and the fluorescence method complement each other. It is as easy to operate and use as the WCT120.
wct-120pl System Capabilities
Main Applications :
By using QSSPC or Short life span measurement and PL Measurement manufacture process Monitoring and Optimization steps .
Other features:
initial Material (silicon wafer) Quality Control
During the processing of silicon wafers of Heavy metal pollution Wafer Detection
evaluate Surface passivation and emitter Dopant diffusion
Use implicit VOC Measurement to find leakage factors introduced by the production process
Iteration calculate qsspl and QSSPC Data obtained Substrate doping
The figure above is a comparison curve of carrier density between a calibrated fluorescence lifetime curve obtained by WCT-120PL and a calibrated QSSPC lifetime curve to generate lifetime data.
For more information, please see the attached file
WCT-120PL The wafer lifetime measurement tool uses the same unique measurement and analysis technology as the WCT-120, while adding a photoluminescence (PL) detector to measure the PL lifetime and doping status of the sample. (QSSPC) Lifetime measurement method and transient photoconductivity decay (PCD) The lifetime measurement method is supplemented by a calibrated PL lifetime measurement method. The tool can also be used as a standard WCT-120.
WCT-120PL System Features
Main application: QSSPC Alternatively, transient lifetime measurements and PL measurements can be used to monitor and optimize the manufacturing process step by step.
Other applications:
l Monitor initial material quality
l Detecting heavy metal contamination during wafer processing
l Evaluation of surface passivation and emitter doping diffusion
l Using Implicit Voc Measurement to Evaluate Process-Induced Diversion
l Iterative calculation of doping profiles for all matrices from QSSPL and QSSPC data
Shanghai Sales + Technical Support + After-sales Service Center Rayscience Optoelectronic Innovation Co., Ltd address: 4th Floor, Building 122, Lane 2338, No. 1 Duhui Road, Minhang District, Shanghai Telephone: 021-34635258 021-34635259 fax: 021-34635260 E-mail: saleschina@rayscience.com
