Minority Carrier Lifetime Tester BCT-400 Testing Silicon Ingot

Minority Carrier Lifetime Measurement Instrument BCT-400

Sinton BCT-400

It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rod based on eddy current sensor and infrared photoconductive method, with transient and quasi-steady state measurement modes. The device can detect the minority carrier lifetime in the 3mm depth range, and can output the minority carrier lifetime value under different carrier injection levels, which can realize the measurement of minority carrier lifetime of low resistivity silicon single crystal, and can realize the calculation of single crystal defect density through software-side light intensity bias.

The BCT-400 equipment will provide a powerful quality assurance tool for photovoltaic customers to produce high-quality solar-grade monocrystalline silicon wafers.

The BCT-400 measurement system can directly measure the minority carrier lifetime of single crystal and multicrystalline silicon (ingot or block) without surface passivation.

Since minority carrier lifetime is the most sensitive technical parameter to measure growth and defect content, this tool directly obtains the quality parameters of grown silicon.

As the easiest-to-use measuring tool, BLS only requires a flat surface with a diameter of 150mm. If you only want to measure flat samples, please choose BCT-400.

Product Description:

1. Application (high frequency photoconductivity)

For measuring the minority carrier lifetime of silicon and germanium single crystals, in addition to having a measurement plane,

There is no strict requirement for the shape, and the life span of block and sheet single crystals can be measured. Life span measurement can sensitively reflect the single crystal

The presence of internal heavy metal impurities and defects are important inspection items for single crystal quality.

2. Equipment composition

2.1 Optical pulse generator

Repetition frequency>25 times/s Pulse width>60μs Light pulse off time<1μs

Infrared light source wavelength: 1.06~1.09μm (measure silicon single crystal) Pulse current: 5A~20A

Sinton minority carrier lifetime tester, BCT-400 test silicon ingot, BLS-I test silicon rod, Sinton X-flash lamp head, Sinton X5D flash lamp head, Sinton X flash lamp holder.

Sinton BCT-400 Minority Carrier Lifetime Measurement Instrument

The BCT-400 measurement system can directly measure the minority carrier lifetime of single crystal and multicrystalline silicon (ingot or block) without surface passivation.
It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rod based on eddy current sensor and infrared photoconductive method, with transient and quasi-steady state measurement modes. The device can detect the minority carrier lifetime in the 3mm depth range, and can output the minority carrier lifetime value under different carrier injection levels, which can realize the measurement of minority carrier lifetime of low resistivity silicon single crystal, and can realize the calculation of single crystal defect density through software-side light intensity bias.

Sinton BLS-I Minority Carrier Lifetime Measurement Instrument

The BLS-I measurement system is used to measure the minority carrier lifetime of silicon and germanium single crystals. It has no strict requirements on the shape of the sample block except that it needs a measurement plane. It can measure the lifetime of block and sheet single crystals. The lifetime measurement can sensitively reflect the heavy metal impurity pollution and defects in the single crystal, and is an important inspection item for the quality of single crystals.

If you want to measure the lifetime of a germanium single crystal, you need to configure a light source with an appropriate wavelength.

Measurement parameters Minority carrier lifetime, resistivity, trap density

Measurable minority carrier lifetime range 0.1us-10ms

Measurable resistivity range 0.5-300ohm.cm

Analysis Mode

Analysis of minority carrier lifetime using quasi-steady-state method

Minority Carrier Lifetime Analysis Using Transient Method

General Methods for Minority Carrier Lifetime Analysis

A range of paranoid light that can be applied to modify traps 0-50suns

Surface types of samples that can be measured

Silicon block sample with flat surface (BCT-400)

Silicon block sample with uneven surface (BLS-I)

The diameter of the uneven arc can reach 150mm

Light source spectrum White light and infrared light

The area of the sensor 45cm*45cm

Measurable depth 3mm

Simple operation and high sensitivity

The BLS-I and BCT-400 measurement systems perform lifetime measurements on single crystal or multicrystalline silicon (ingot or block) without surface passivation. Because lifetime measurements are an advanced technique for characterizing growth characteristics and contamination defect sensitivity, these tools allow you to assess the quality of silicon after growth.

Superior performance

The non-contact method measures the true minority carrier lifetime of silicon blocks, which complies with SEMI's PV13 standard. Compared with other minority carrier lifetime testers in the industry, the BLS-I/BCT series is a minority carrier lifetime tester with superior performance.

Multiple models to choose from

If you want a machine that can measure a wide range of surface types (150mm diameter to smooth), choose BLS-1. If you only need to measure smooth surfaces, choose BCT-400.

BCT400/BLS-1 Applications

Common measuring equipment for manufacturer quality control, with a wide range of customers

• High purity silicon with a measurement lifetime in the range of 1-5 ms (milliseconds)

•Measurement of native CZ silicon without special surface treatment

•Measure the lifetime and capture concentration of polysilicon blocks

• Detect boron oxide defects, iron contamination, and surface damage

• Test the quality of the initial raw materials of CZ silicon, FZ silicon, polysilicon or high purity metallurgical silicon