• WCT-120 / 120MX Silicon Wafer Life Tester
  • WCT-120 / 120MX Silicon Wafer Life Tester

WCT-120 / 120MX Silicon Wafer Life Tester

No.WCT-120 / 120MX

WCT-120 / 120MX Silicon Wafer Life Tester

Product Overview

The silicon wafer test instrument provides the best available technology for calibrated analysis of carrier recombination lifetime, fully compliant with SEMI standard PV-13.

The WCT-120 is a desktop silicon wafer lifetime measurement system suitable for device research and industrial process control at an affordable price. The WCT-120MX is suitable for testing larger size silicon wafers of 230mm.

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  • WCT-120 / 120MX Silicon Wafer Life Tester
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WCT-120 / 120MX Silicon Wafer Life Tester

Product Overview

The silicon wafer test instrument provides the best available technology for calibrated analysis of carrier recombination lifetime, fully compliant with SEMI standard PV-13.

The WCT-120 is a desktop silicon wafer lifetime measurement system suitable for device research and industrial process control at an affordable price. The WCT-120MX is suitable for testing larger size silicon wafers of 230mm.

Product Overview:

The WCT-120 and WCT-120MX instruments showcase our unique measurement and analysis technologies, including the SEMI-compliant Quasi-Steady-State Photoconductivity (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.

The WCT-120 instrument uses QSSPC and transient photoconductivity decay techniques to measure silicon wafer lifetimes in the range of 10ns to 10ms+. QSSPC technology is suitable for monitoring polycrystalline silicon wafers, doping diffusion and low-lifetime samples. Transient photoconductivity decay technology is suitable for step-by-step process monitoring of high-lifetime samples.

The WCT-120 life test also gives an implicit open circuit voltage (varying with light intensity) curve, which is equivalent to giving an IV curve at each stage of the battery process.

Main applications:

-----Step-by-step monitoring and optimization of the manufacturing process.

Other applications:

---Monitoring initial material quality

---Detection of heavy metal impurities during silicon wafer processing

---Evaluation of surface passivation and emitter doping diffusion

---Use the implicit IV test to estimate the parallel resistance caused by the process

project content
Measurement parameters Minority carrier lifetime, resistivity, emitter saturation current density, trap concentration, Voc under standard sun
Life measurement range 100nm-10ms
Measurement (Analysis) Mode QSSPC, transient and normalized lifetime analysis
Resistivity measurement range 3-600 (undoped) Ohms/sq
Available bias voltage range 0-50suns
Available spectra White light and infrared light
Sensing range Diameter 40mm
Sample size, standard configuration Standard diameter: 40-230mm
Wafer thickness range 10-2000um
Shanghai Sales + Technical Support + After-sales Service Center
Rayscience Optoelectronic Innovation Co., Ltd

address: 4th Floor, Building 122, Lane 2338, No. 1 Duhui Road, Minhang District, Shanghai
Telephone:
021-34635258 021-34635259
fax:
021-34635260
E-mail:
saleschina@rayscience.com

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