How to use Suns-Voc to optimize slurry and sintering technology
Minority carrier lifetime, quality of PN junction, surface and internal recombination, material quality, passivation effect, etc. Life time,Pseudo-EFF, Pseudo-Voc, Pseudo-FF, Ideality factor
Compare this curve with the last measured I to V The curve can accurately measure the series resistance of the battery.
Suns-Voc System Characteristics
The temperature control of the wafer measurement is 25°C
High precision of voltage probes
Compatible with magnetic probes
Xenon lamp with a full set of density correction filters
The rear support is height-adjustable to accurately adjust the brightness
Applicable standards I to V Graphs and Suns-Voc Graph
Determine wafer characteristics without being affected by series resistance
Suns-Voc Applications
By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present), the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage, so it is free from the effects of series resistance. Comparing this curve to the final IV curve gives a precise measure of the series resistance in the cel
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