It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rod based on eddy current sensor and infrared photoconductive method, with transient and quasi-steady state measurement modes. The device can detect the minority carrier lifetime in the 3mm depth range, and can output the minority carrier lifetime value under different carrier injection levels, which can realize the measurement of minority carrier lifetime of low resistivity silicon single crystal, and can realize the calculation of single crystal defect density through software-side light intensity bias.
The BLS-I and BCT-400 measurement systems perform lifetime measurements on single crystal or multicrystalline silicon (ingot or block) without surface passivation. Because lifetime measurements are an advanced technique for characterizing growth characteristics and contamination defect sensitivity, these tools allow you to assess the quality of silicon after growth.
Superior performance
The non-contact method measures the true minority carrier lifetime of silicon blocks, which complies with SEMI's PV13 standard. Compared with other minority carrier lifetime testers in the industry, the BLS-I/BCT series is a minority carrier lifetime tester with superior performance.
Multiple models to choose from
If you want a machine that can measure a wide range of surface types (150mm diameter to smooth), choose BLS-1. If you only need to measure smooth surfaces, choose BCT-400.
BCT400/BLS-1 Applications
Common measuring equipment for manufacturer quality control, with a wide range of customers
• Measuring high purity silicon with lifetime in the range of 1-5 ms (milliseconds)
• Measuring native CZ silicon without special surface treatment
• Measuring lifetime and trapped concentration in polysilicon blocks
• Detection of Boron Oxide Defects, Iron Contamination, and Surface Damage
• Testing the quality of the initial raw materials of CZ silicon, FZ silicon, polysilicon or high purity metallurgical silicon
It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rod based on eddy current sensor and infrared photoconductive method, with transient and quasi-steady state measurement modes. The device can detect the minority carrier lifetime in the 3mm depth range, and can output the minority carrier lifetime value under different carrier injection levels, which can realize the measurement of minority carrier lifetime of low resistivity silicon single crystal, and can realize the calculation of single crystal defect density through software-side light intensity bias.
The BCT-400 equipment will provide a powerful quality assurance tool for photovoltaic customers to produce high-quality solar-grade monocrystalline silicon wafers.
Product Description:
1. Application (high-frequency photoconductivity): used for measuring the minority carrier lifetime of silicon and germanium single crystals. Except for the need for a measurement plane, there is no strict requirement for the shape of the sample block. The lifetime of block and sheet single crystals can be measured. The lifetime measurement can sensitively reflect the heavy metal impurity pollution and defects in the single crystal, and is an important inspection item for the quality of single crystals.
2. Equipment composition
1). BCT-400 host, signal junction box and signal cable
2) Probe flash with bandpass filter
3) Install the computer system with the following software: Windows updates
4). Sinton data acquisition and analysis software package
5). 12-bit data acquisition card
Classic User:
Zhonghuan, Canadian Solar, JA Solar, Shuangliang Silicon Materials , Hong Taiyang, Meike Energy, GCL Energy, and Tongwei Shares;
project
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Measurement parameters
Minority carrier lifetime, resistivity, trap density
Measurable minority carrier lifetime range
0.1us-10ms
Measurable resistivity range
0.5-300ohm.cm
Analysis Mode
Analysis of minority carrier lifetime using quasi-steady-state method
Minority Carrier Lifetime Analysis Using Transient Method
General Methods for Minority Carrier Lifetime Analysis
A range of paranoid light that can be applied to modify traps
0-50suns
Surface types of samples that can be measured
Silicon block sample with flat surface (BCT-400)
Silicon block sample with uneven surface (BLS-I)
The diameter of the uneven arc can reach 150mm
Light source spectrum
White light and infrared light
The area of the sensor
45cm*45cm
Measurable depth
3mm
Shanghai Sales + Technical Support + After-sales Service Center Rayscience Optoelectronic Innovation Co., Ltd address: 4th Floor, Building 122, Lane 2338, No. 1 Duhui Road, Minhang District, Shanghai Telephone: 021-34635258 021-34635259 fax: 021-34635260 E-mail: saleschina@rayscience.com
