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Features |
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● Conforms to American ASTM standards |
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● Can measure silicon wafers and silicon blocks, can increase minority carrier lifetime map |
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● Non-destructive and non-contact measurement |
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Main parameters |
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Test range and accuracy |
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Testable Materials |
Monolithic or bulk silicon materials |
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Solar cell after diffusion to form PN (without metal electrode) |
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Minority carrier lifetime test range |
1 μs~1000μs |
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Resistivity test range |
≥0.1Ωcm |
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Resolution |
5mm |
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Test non-repeatability |
≤2% |
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Test speed |
5 Seconds/points |
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Mechanical parameters |
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Microwave source |
Length*width*height: 1400mm*1380mm*810mm |
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Industrial Computer |
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Pulsed laser source |
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Requirements |
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powered by |
AC single phase, 220V/110V±10%, 20A, 50/60Hz |
