• Hall Effect Tester
  • Hall Effect Tester

Hall Effect Tester

No.Hall8800
Hall effect tester: It is mainly used to measure important characteristic parameters of electronic materials, such as carrier concentration, mobility, resistivity, Hall coefficient, etc., both thin film and bulk materials can be used. Its principle is mainly based on the Vanderbilt law.
In addition to determining the type of semiconductor material (n or p), it can also be used to determine the quality of LED epitaxial layers and whether two-dimensional electron gas is formed in HEMT components. It can also be used to assist in the process of solar cell manufacturing.
概述: HALL系列霍尔效应测试仪具有人性化的软件设计及模块化组件,性能卓越,操作方便;系统结合霍尔效应及van der pauw方法四点测量分析薄膜材料的电阻率,载流子浓度(N Type & P TYPE)及迁移率等相关参数信息,根据用户测试温度环境的不同,可分为常温/低温型及变温型,型号分别为:HALL8800常温(300K)及低温型(77K)、HALL8200高温变温(温度范围:室温至250°C)、HALL8686变温型(温度范围:77K-425K)、HALL8888变温型(温度范围:77K-77
概述: HALL系列霍尔效应测试仪具有人性化的软件设计及模块化组件,性能卓越,操作方便;系统结合霍尔效应及van der pauw方法四点测量分析薄膜材料的电阻率,载流子浓度(N Type & P TYPE)及迁移率等相关参数信息,根据用户测试温度环境的不同,可分为常温/低温型及变温型,型号分别为:HALL8800常温(300K)及低温型(77K)、HALL8200高温变温(温度范围:室温至250°C)、HALL8686变温型(温度范围:77K-425K)、HALL8888变温型(温度范围:77K-773K);  应用: 主要针对于研究半导体材料电学特性、精密测量半导体材料的载流子浓度、迁移率、电阻率、霍尔系数等重要参数,在科学研究,教育以及产品测试等领域有着广泛应用;测试薄膜材料包括Si,Ge,sige,sic,gaas,ingaas,inp,gan,zno,graphene等各类半导体材料; 技术参数: HALL8800-II常温及低温型霍尔效应测试仪 sample size:5mm x5mm----20mm x20mm 样品尺寸: 5mm x5mm -
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The Hall effect tester is used to measure important parameters of semiconductor materials such as carrier concentration, mobility, resistivity, and Hall coefficient. These parameters must be controlled in advance to understand the electrical properties of semiconductor materials. Therefore, it is an essential tool for understanding and studying the electrical properties of semiconductor devices and semiconductor materials.

Hall8800 Hall Effect Tester Introduction
This instrument is a Hall effect instrument with stable performance, powerful functions and high cost performance. It has a wide range of users and popularity in domestic universities, research institutes and the semiconductor industry.
It is mainly used to measure important characteristic parameters of electronic materials, such as carrier concentration, mobility, resistivity, Hall coefficient, etc., both thin film and bulk materials can be used. Its principle is mainly based on the Vanderbilt law.
The instrument is light, convenient and easy to carry. It is mainly used to measure important characteristic parameters of electronic materials, such as carrier concentration, mobility, resistivity, Hall coefficient, etc., both thin film and bulk materials can be used. Its principle is mainly based on the Vanderbilt law.
In addition to determining the type (n or p) of semiconductor materials, it can also be used to determine the quality of LED epitaxial layers and to determine whether two-dimensional electron gas is formed in HEMT components. It can also be used to assist in the process of solar cell manufacturing.
Hall8800 can be said to be a powerful and widely applicable system. Coupled with its affordable price, I believe it will be recognized and loved by users from all walks of life.
Currently widely used in semiconductor manufacturers.
Main Features
1. High-precision current source
The accuracy of the output current can reach 2nA. Such a small current can be used to measure semi-insulating materials, that is, high resistance materials.
2. High-precision electric meter
Using ultra-high precision meters, the voltage measurement capability can reach nV level, and the upper limit can reach 300V, which is very suitable for measuring low resistance materials.
3. Simple appearance and easy operation
The appearance is light and beautiful. The polarity of the magnet group can be changed flexibly and easily. The unique liquid nitrogen container design can ensure the best stability of low-temperature measurement.
4. IV curve
The current-voltage curve between the four points (A, B, C, D) of the probe is measured in a graphical manner to judge the quality of the sample's ohmic contact.
5. Simple and easy-to-use operation interface
The user can complete all settings on the same operation screen. The experimental results are automatically calculated by the software and displayed on the same screen, eliminating the trouble of screen switching. The results can simultaneously obtain important experimental data such as bulk carrier concentration, surface carrier concentration, mobility, resistivity, Hall coefficient, etc.
6. Self-developed spring sample fixture and specially designed spring probe, whose enhanced strength can improve the electrical contact between the probe and the contact point, and enhance the reliability of measurement.
Technical Parameters
Magnetic field strength: 0.65T/1T;
Measured at room temperature and liquid nitrogen temperature (77K);
Output current: 2nA-100mA;
Mobility (cm2/Volt-sec): 1-107
Impedance:10-6 to 107
Carrier concentration (cm-3): 107 - 1021
Sample fixture:
Hall8800 spring sample fixture (avoids the trouble of making Hall samples);
Measuring materials: All semiconductor materials including Si, ZnO, SiGe, SiC, GaAs, InGaAs, InP, GaN (both N-type and P-type can be measured)
Instrument size (WxDxH): 260*220*180 mm
Instrument weight: 6kg
Buy Hall8800 now and you can enjoy free upgrade of the configuration of the test liquid nitrogen temperature area and get 99.999% pure indium wire for electrode use.
1 Application scope: Research on the electrical properties of semiconductor devices and semiconductor materials, and precision measurement of important parameters such as carrier concentration, mobility, resistivity, and Hall coefficient of semiconductor materials
2 Specification:
2-1 Maximum sample size (Small board) - 15mm x15mm
Maximum sample size: 15mm x15mm (customizable)
2-3 Measurement Material: Semiconductors material such as
Si, SiGe, SiC,GaAs, InGaAs, InP, GaN, ITO (N Type & P Type)
Test material: semiconductor materials, such as:
All semiconductor films (P-type and N-type) such as Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN, ITO, etc.
2-1 Resistivity (Ohm.cm): 10-5 to 107
Resistivity(Ω.㎝): 10-5 to 107
2-2 Mobility (cm2/Volt.sec): 1 ~ 107
Mobility (cm2/Volt.sec): 1 ~ 107
2-3 Carrier Density (cm-3): 107 ~ 1021
Carrier concentration (1/cm3): 107 ~ 1021
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