Variable Temperature Hall Effect Tester Hall8686

Hall effect tester produced by Taiwan SWIN Company (Hall Effect Measurement System)Yes The Hall effect instrument with stable performance, powerful functions and high cost performance has a wide range of users and popularity in domestic universities, research institutes and semiconductor industry. This instrument is light and convenient, easy to carry, and is mainly used to measure important characteristic parameters of electronic materials, such as carrier concentration, mobility, resistivity, Hall coefficient, etc., both thin film and bulk materials can be used, and its principle is mainly based on the Vanderbilt law.

In addition to determining the type (n or p) of semiconductor materials, it can also be used to determine the quality of LED epitaxial layers and to determine whether two-dimensional electron gas is formed in HEMT components. It can also be used to assist in the process of solar cell manufacturing.

Hall8686 is a powerful and widely used system. Hall8686 adds temperature control function to Hall8800, making it an ideal choice for some high-end scientific research customers. SWIN has always been adhering to the affordable price, and I believe it will be recognized and loved by users from all walks of life. It is currently widely used by Taiwan semiconductor manufacturers.

Main Features

1. High-precision current source
The accuracy of the output current can reach 1nA. Such a small current can be used to measure semi-insulating materials, that is, high resistance materials.
2. High-precision electric meter
Using ultra-high precision meters, the voltage measurement capability can reach nV level, and the upper limit can reach 300V, which is very suitable for measuring low resistance materials.
3. Simple appearance and easy operation
The appearance is light and beautiful. The polarity of the magnet group can be changed flexibly and easily. The unique liquid nitrogen container design can ensure the best stability of low-temperature measurement.
4. IV curve
The current-voltage curve between the four points (A, B, C, D) of the probe is measured in a graphical manner to judge the quality of the sample's ohmic contact.
5. Simple and easy-to-use operation interface

The user can complete all settings on the same operation screen. The experimental results are automatically calculated by the software and displayed on the same screen, eliminating the trouble of screen switching. The results can simultaneously obtain important experimental data such as bulk carrier concentration, surface carrier concentration, mobility, resistivity, Hall coefficient, etc.
6. Self-developed spring sample fixture and specially designed spring probe, whose enhanced strength can improve the electrical contact between the probe and the contact point, and enhance the reliability of measurement.

Technical Parameters

Magnetic field strength: 0.53T;
Temperature test range: 77K-423K, 77K-623K optional, Temperature accuracy +/-0.5 degrees;
Output current: 1nA-100mA;
Mobility (cm2/Volt-sec): 1-10 ⁷
Impedance(Ohms.cm):10 ^-5 to 10 ⁷
Carrier concentration (cm ^-3 ):10 ⁷ - 10 ^{twenty one}
Sample size: 5-15mm, thickness 1mm
Sample fixture: Hall8686 spring sample fixture (avoids the trouble of making Hall samples);
Measuring materials: All semiconductor materials including Si, ZnO, SiGe, SiC, GaAs, InGaAs, InP, GaN (both N-type and P-type can be measured)
Instrument size (WxDxH): 400*360*200 mm
Instrument weight: 15kg