Features
● The test principle adopts the internationally recognized microwave reflection photoconductivity decay method
● Use professional lasers with sufficient pulse energy and suitable wavelength as the excitation source, with reliable and stable performance
● Convenient and intuitive operation process with simple steps
Main parameters
Test range and accuracy
Testable Materials
Silicon wafer or bulk silicon material
Solar cell after diffusion to form PN (without metal electrode)
Minority carrier lifetime test range
(1~1000)μs
Resistivity test range
≥0.1Ω·cm
Test non-repeatability
≤5%( When the test conditions remain unchanged)
Test speed
2 Seconds/points
Mechanical parameters
Microwave source
10Kg; 465mm( Length)*230mm(width)*470mm(height)
Industrial Computer
20Kg; 500mm( Length)*400mm(width)*170mm(height)
Pulsed laser source
10Kg; 350mm( Length)*130mm(width)*450mm(height)
Requirements
powered by
220VAC±10%, 20A, 50/60Hz , single-phase electricity
