The main materials that can be deposited by atomic layer deposition technology include:
| Material Category | Deposition materials | |
|---|---|---|
| II-VI compounds | BaS, CaS, CdS, Cd 1-x Mn x Te, CdTe, Hg 1-x Cd x Te, HgTe, MnTe, SrS, SrS 1-x Se x , ZnS, ZnSe, ZnS 1-x Se x , ZnTe | |
| II-VI fluorescent materials based on TFEL | CaS:M (M= Ce, Eu, Pb, Tb), SrS:M (M=Ce, Cu, Mn, Pb, Tb, ), ZnS:M (M=Mn, Tb, Tm) | |
| III-V compounds | AlAs, Al x Ga 1-x As, AlP, GaAs, Ga x In 1-x As, Ga x In 1-x P, GaP, InAs, InP | |
| Nitrogen/Carbide | semiconductor Dielectric Materials |
AlN, GaN, InN, SiN x |
| conductor | MoN(C), NbN(C), Ta 3 N 5 , TaN(C), TiN(C) | |
| Oxide | Dielectric layer | Al 2 O 3 , BaTiO 3 , CeO 2 , HkDJ 2 , La 2 O 3 , MgO, Nb 2 O 5 , SiO 2 , SrTiO 3 , Ta 2 O 5 , TiO 2 , Y 2 O 3 , ZrO 2 |
| Transparent conductor semiconductor |
CoO x , Ga 2 O 3 , In 2 O 3 , In 2 O 3 :Sn, In 2 O 3 :F, In 2 O 3 :Zr, NiO, SnO 2 , SnO 2 :Sb, ZnO, ZnO:Al | |
| Superconducting materials | YB 2 Cu3O 7-x | |
| Other ternary materials | LaCoO 3 , LaNiO 3 ,Ba x (Y 1-x )ZrO 3 | |
| Fluoride | CaF 2 , MgF 2 , SrF 2 , ZnF 2 | |
| Single material | Co, Cu, Fe, Ge, Mo, Ni, Si, Pt, Ru | |
| other | CuGaS 2 , In 2 S 3 , La 2 S 3 , PbS, SiC | |
