The production process of multi-crystalline and single-crystalline silicon wafers is a complex mechanical, chemical, thermal, and electrophysical process. After the silicon wafer is cut from the silicon ingot, it undergoes etching and surface doping. These processes, as well as the grabbing and transportation of the wafers between processes, will introduce stress and cause some defects, such as: Micro cracks, Pinholes, doping, dirt
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