Fully automatic electrochemistry CV Distributor CVP21 The first choice in the semiconductor field! The first choice for many users in scientific research and semiconductor fields!
Shanghai Shunmiao Optoelectronics Official China Best Fully automatic electrochemistry CV Distributor Semiconductor field agent! Serving many well-known semiconductor companies!
The equipment is suitable for evaluating and controlling epitaxial processes in semiconductor production and can be used on a variety of different materials, such as: Silicon, Germanium, III-V including III-Nitrides.
CVP21 The clean room and modular system design structure enable this system to measure the doping concentration distribution in semiconductor materials (structures, layers) efficiently and accurately. Select appropriate electrolyte to contact and corrode the material, so as to obtain the doping concentration distribution of the material . Capacitance voltage scanning and corrosion process are fully automatically controlled by software CVP21 System Features • Robust and reliable modular system structure .The optics, electronics and chemistry parts are relatively independent. • Precise measurement circuit module • Powerful control software, system operation, easy to use • Complete after-sales service system
Crystalline silicon is especially recommended Solar Battery research unit use
Electrochemical ECV is mainly used in the research and development of semiconductor materials. Its principle is to use the electrochemical capacitance-voltage method to measure the doping concentration distribution of semiconductor materials.
Electrochemical ECV (CV-Profiler, CV Profiler) is also a good choice for analyzing or developing semiconductor photo-electrochemical wet etching (PEC Etching).
Instrument features:
CVP21 electrochemical ECV is the perfect solution for semiconductor carrier concentration distribution:
CVP21 has a wide range of applications and can be used for most semiconductor materials.
* Group IV compound semiconductors such as silicon (Si), germanium (Ge), silicon carbide (SiC), etc.
* III-V compound semiconductors such as gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), etc.
* Ternary III-V compound semiconductors such as aluminum gallium arsenide (AlGaAs), gallium indium phosphide (GaInP), aluminum indium arsenide (AlInAs), etc.
* Quaternary III-V compound semiconductors such as aluminum gallium indium phosphide (AlGaInP) etc…
* Nitrides such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium nitride (AlInN), etc…
* II-VI compound semiconductors such as zinc oxide (ZnO), cadmium telluride (CdTe), mercury cadmium telluride (HgCdTe), etc.
* Other uncommon semiconductor materials (please contact us for sample measurement).
CVP21 can be used for samples of different forms: multi-layer thin film materials, no restrictions on substrates (substrates can be conductive or insulating), standard sample sizes range from 4*2mm to 8-inch wafers (please consult us in advance for smaller samples).
CVP21 has a very good resolution range.
* Carrier concentration resolution ranges from < 10 12 cm -3 ~ > 10 twenty one cm -3
* Depth resolution ranges from 1nm to 100um (depending on sample type and sample quality)
CVP21 is a complete electrochemical ECV measurement system.
* High system reliability (the electronic, mechanical, optical and liquid transmission parts of the instrument are specially designed)
* Calibration-free system (fully self-calibrating electronic system, cable capacitance does not require user recalibration)
* Ease of use (full user management software optimized for ease of use in lab or production environments)
* Camera lens control (the process is controlled online by a color camera lens; the lens data can be retrieved after each measurement.)
* Experimental menu (predefined measurement menus, which can be easily modified or improved by privileged users)
* Dry-In/Dry-Out: Auto-Load/Unload/Reload (Electrochemical sample cell automatic loading/unloading/reloading, priority user easy to modify, sample dry-in/dry-out processing.)
Well-known users: ( Shin-Etsu SEH or ISFH) In the field of solar cell research, the CVP21 system is currently being used at many research centers. It was first used in 1999 by the Fraunhofer Institute for Solar Energy Systems (ISE) in Freiburg, Germany, and since then it has been installed at the Institute for Molecules and Materials (IMM) in Nijmegen, The Netherlands, the RWE Space Solar Power GmbH in Heilbronn, Germany, Hahn-Meitner-Institute (HMI) in Berlin, Germany, and the Institute for Solar Energy Research (ISFH) in Hamelin/Emmerthal, Germany. There are many solar cell users in Germany and Japan, but they cannot be disclosed due to commercial confidentiality.
The product perfectly combines our more than 30 years of experience in electrochemical distribution testing with the world's most advanced circuit system.
Fully automatic, especially suitable for new materials such as GaN, SiC, polysilicon, etc.
Effective detection:
• Epitaxial Materials
• diffusion
• Ion implantation
Applicable Materials : CVP21 It has a wide range of applications and can be used for most semiconductor materials.
Group IV compound semiconductors such as silicon (Si), germanium (Ge), silicon carbide (SiC), etc.
III-V compound semiconductors such as gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), etc.
Ternary III-V compound semiconductors such as aluminum gallium arsenide (AlGaAs), gallium indium phosphide (GaInP), aluminum indium arsenide (AlInAs), etc.
Quaternary III-V compound semiconductors such as aluminum gallium indium phosphide (AlGaInP) etc…
Nitrides such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium nitride (AlInN), etc…
II-VI compound semiconductors such as zinc oxide (ZnO), cadmium telluride (CdTe), mercury cadmium telluride (HgCdTe), etc.
Other uncommon semiconductor materials (please contact us for sample measurement).
We have over 30 years of experience in electrochemical distribution testing products and the most advanced circuit systems in the world.
Fully automatic, especially suitable for new materials such as gallium nitride, silicon carbide, etc.
Effective inspection: epitaxial materials, diffusion, ion implantation Applicable materials: CVP21 has a wide range of applications and can be used for most semiconductor materials. Group IV compound semiconductors such as silicon (Si), germanium (Ge), silicon carbide (SiC), etc.; III-V compound semiconductors such as gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), etc.; Ternary III-V compound semiconductors such as aluminum gallium arsenide (AlGaAs), gallium indium phosphide (GaInP), aluminum indium arsenide (AlInAs), etc.; Quaternary III-V compound semiconductors such as aluminum gallium indium phosphide (AlGaInP), etc. Nitrides such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium nitride (AlInN), etc.; II-VI compound semiconductors such as zinc oxide (ZnO), cadmium telluride (CdTe), mercury cadmium telluride (HgCdTe), etc.; Other uncommon semiconductor materials (please contact us for sample measurement).
Carrier concentration measurement range: *Maximum 1021/cm³; Minimum 1011/cm³ Depth resolution: unlimited; minimum down to 1 nm (or less) Modular system structure: Topological structure, real-time monitoring of corrosion process, suitable for tiny samples and large-sized wafers, fully automated system.
Key Features:
CVP21 electrochemical ECV is the perfect solution for semiconductor carrier concentration distribution: 1. CVP21 has a wide range of applications and can be used for most semiconductor materials. * Group IV compound semiconductors such as silicon (Si), germanium (Ge), silicon carbide (SiC), etc.; * III-V compound semiconductors such as gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), etc.; * Ternary III-V compound semiconductors such as aluminum gallium arsenide (AlGaAs), gallium indium phosphide (GaInP), aluminum indium arsenide (AlInAs), etc.; * Quaternary III-V compound semiconductors such as aluminum gallium indium phosphide (AlGaInP), etc. * Nitrides such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium nitride (AlInN), etc.; * II-VI compound semiconductors such as zinc oxide (ZnO), cadmium telluride (CdTe), mercury cadmium telluride (HgCdTe), etc.; * Other uncommon semiconductor materials (please contact us for sample measurement). 2. CVP21 can be used for samples of different forms: multi-layer thin film materials, no restrictions on substrates (substrates can be conductive or insulating), standard sample sizes range from 4*2mm to 8-inch wafers (please consult us in advance for smaller size samples). 3. CVP21 has a good resolution range. * Carrier concentration resolution ranges from < 1012 cm-3 to > 1021 cm-3 * Depth resolution ranges from 1nm to 100um (depending on sample type and sample quality) 4. CVP21 is a complete electrochemical ECV measurement system. * High system reliability (the electronic, mechanical, optical and liquid transmission parts of the instrument are specially designed) * Calibration-free system (fully self-calibrating electronic system, cable capacitance does not require user recalibration) * Ease of use (full user management software optimized for ease of use in lab or production environments) * Camera lens control (the process is controlled online by a color camera lens; the lens data can be retrieved after each measurement.) * Experimental menu (predefined measurement menus, which can be easily modified or improved by privileged users) * Dry-In/Dry-Out: Auto-Load/Unload/Reload (Electrochemical sample cell automatic loading/unloading/reloading, priority user easy to modify, sample dry-in/dry-out processing.)
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