Thin Film Stress Measurement System

No.BN-A8EDFC21

The world's top thin film stress measurement system, MOS technology has been awarded the US patent! Won the 2008 Innovation of the Year Awardee!

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Technical indicators:

• 1. XY bidirectional program-controlled scanning platform scanning range: 200mm; 300mm (XY) (optional);

• 2. XY bidirectional scanning speed: maximum 20mm/s;

• 3. XY bidirectional scanning platform scanning minimum step/resolution: 2 μm;

• 4. Film stress measurement range: 5×104Pa to 4×109Pa);

• 5. Thin film stress measurement resolution: better than 0.1MPa;

• 6. Measurement accuracy: better than ±0.1%;

• 7. Measurement repeatability: better than 0.1%;

• 8. Average curvature resolution: < 2e-5 (1/m) 1-sigma (100km radius);

• 9. Average curvature repeatability: <2×10e-5 1/m;

Key Features:

• 1.Programmable control scanning mode: selected area, multi-point linear scanning, full area scanning;
2. Imaging function: 2D curvature imaging of sample surface, quantitative 2D imaging analysis of film stress;
3. Measurement functions: curvature, curvature radius, stress intensity, stress and warpage, etc.;
4. Support variable temperature thermal stress measurement function, temperature range -65C to 1000C;
5. Measurement of film residual stress;

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Thin Film Stress Measurement System

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