Minority Carrier Lifetime Measurement Instrument BLS-Testing Silicon Rod
No.BLS-I
The minority carrier lifetime measurement instrument BLS-I is used to measure the minority carrier lifetime of silicon and germanium single crystals. In addition to having a measurement plane, the sample block
There is no strict requirement for the shape, and the life span of block and sheet single crystals can be measured. Life span measurement can sensitively reflect the single crystal
The presence of internal heavy metal impurities and defects are important inspection items for single crystal quality.
The BLS-I measurement system is used to measure the minority carrier lifetime of silicon and germanium single crystals. It has no strict requirements on the shape of the sample block except that it needs a measurement plane. It can measure the lifetime of block and sheet single crystals. The lifetime measurement can sensitively reflect the heavy metal impurity pollution and defects in the single crystal, and is an important inspection item for the quality of single crystals.
Sinton minority carrier lifetime tester, BCT-400 test silicon ingot, BLS-I test silicon rod, Sinton X-flash lamp head, Sinton X5D flash lamp head, Sinton X flash lamp holder.
The BCT-400 measurement system can directly measure the minority carrier lifetime of single crystal and multicrystalline silicon (ingot or block) without surface passivation. It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rod based on eddy current sensor and infrared photoconductive method, with transient and quasi-steady state measurement modes. The device can detect the minority carrier lifetime in the 3mm depth range, and can output the minority carrier lifetime value under different carrier injection levels, which can realize the measurement of minority carrier lifetime of low resistivity silicon single crystal, and can realize the calculation of single crystal defect density through software-side light intensity bias.
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